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| e PTB 20258 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20258 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 6 Watts, 915-960 MHz Class AB Characteristics 50% Typ Collector Efficiency at 6 Watts Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated Typical Output Power and Efficiency vs. Input Power 8 Output Power 80 68 Efficiency 4 Output Power (Watts) Efficiency (%) 6 56 44 32 20 20 25 8 LO TC OD E VCC = 25 V 2 ICQ = 27 mA f = 960 MHz 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 Input Power (Watts) Package 20208 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) Tstg RJC Symbol VCER VCBO VEBO IC PD Value 55 60 4.0 1.7 22 0.125 -40 to +150 8 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 7-21-98 PTB 20258 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 28 60 3.5 20 Typ 29 70 5 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 6 W, ICQ = 27 mA, f = 960 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 6 W, ICQ = 27 mA, f = 960 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 6 W, ICQ = 27 mA, f = 960 MHz--all phase angles at frequency of test) Symbol Gpe C Min 10 -- -- Typ 11 50 -- Max -- -- 30:1 Units dB % -- Typical Performance Gain vs. Frequency (as measured in a broadband circuit) 13 Output Power (at P-1dB) vs. Supply Voltage 9 Output Power (Watts) VCC = 25 V 12 8 7 6 5 4 3 ICQ = 27 mA POUT = 6 W Gain (dB) ICQ = 27 mA f = 960 MHz 11 10 9 700 750 800 850 900 950 1000 1050 20 22 24 26 28 Frequency (MHz) Supply Voltage (Volts) 2 7-21-98 e Power Gain vs. Output Power 16 14 12 10 PTB 20258 ICQ = 27 mA ICQ = 41 mA Power Gain (dB) ICQ = 7 mA 8 6 0.10 ICQ = 14 mA VCC = 25V f = 960 MHz 1.00 10.00 Output Power (W) Impedance Data (VCC = 25 Vdc, Pout = 6 W, ICQ = 27 mA) Z0 = 50 Z Source Z Load Frequency MHz 1000.00 980.00 960.00 950.00 915.00 900.00 850.00 800.00 750.00 R 3.02 3.10 3.19 3.29 3.79 3.60 3.87 3.90 4.15 Z Source jX -1.05 -1.22 -1.35 -1.55 -1.95 -2.06 -2.04 -2.66 -3.00 R 88.10 9.04 9.06 9.20 9.50 10.10 11.67 12.60 13.80 Z Load jX 12.00 13.00 14.10 14.36 15.98 16.83 17.20 17.80 18.87 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L1 (c) 1998 Ericsson Inc. EUS/KR 1301-PTB 20258 Rev. A 07-21-98 3 |
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